?2002 fairchild semiconductor corporation sgu2n60ufd rev. a1 igbt sgu2n60ufd sgu2n60ufd ultra-fast igbt general description fairchild's ufd series of insulated gate bipolar transistors (igbts) provides low conduction and switching losses. the ufd series is designed for applications such as motor control and general inverters where high speed switching is a required feature. features ? high speed switching ? low saturation voltage : v ce(sat) = 2.1 v @ i c = 1.2a ? high input impedance ? co-pak, igbt with frd : t rr = 45ns (typ.) absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description sgu2n60ufd units v ces collector-emitter voltage 600 v v ges gate-emitter voltage 20 v i c collector current @ t c = 25 c2.4 a collector current @ t c = 100 c1.2 a i cm (1) pulsed collector current 10 a i f diode continuous forward current @ t c = 100 c1.5 a i fm diode maximum forward current 12 a p d maximum power dissipation @ t c = 25 c25 w maximum power dissipation @ t c = 100 c10 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction-to-case -- 5.0 c / w r jc (diode) thermal resistance, junction-to-case -- 5.0 c / w r ja thermal resistance, junction-to-ambient -- 110 c / w applications ac & dc motor controls, general purpose inverters, robotics, and servo controls. i-pak ge c g c e g c e
sgu2n60ufd rev. a1 sgu2n60ufd ?2002 fairchild semiconductor corporation electrical characteristics of the igbt t c = 25 c unless otherwise noted electrical characteristics of diode t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 600 -- -- v ? b vces / ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 1.2ma, v ce = v ge 3.5 4.5 6.5 v v ce(sat) collector to emitter saturation voltage i c = 1.2a , v ge = 15v -- 2.1 2.6 v i c = 2.4a , v ge = 15v -- 2.6 -- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 98 -- pf c oes output capacitance -- 18 -- pf c res reverse transfer capacitance -- 4 -- pf switching characteristics t d(on) turn-on delay time v cc = 300 v, i c = 1.2a, r g = 200 ? , v ge = 15v, inductive load, t c = 25 c -- 15 -- ns t r rise time -- 20 -- ns t d(off) turn-off delay time -- 80 130 ns t f fall time -- 95 160 ns e on turn-on switching loss -- 30 -- uj e off turn-off switching loss -- 13 -- uj e ts total switching loss -- 43 70 uj t d(on) turn-on delay time v cc = 300 v, i c = 1.2a, r g = 200 ? , v ge = 15v , inductive load, t c = 125 c -- 19 -- ns t r rise time -- 24 -- ns t d(off) turn-off delay time -- 115 200 ns t f fall time -- 176 250 ns e on turn - on switching loss -- 36 -- uj e off turn - off switching loss -- 27 -- uj e ts total switching loss -- 63 100 uj q g total gate charge v ce = 300 v, i c = 1.2a, v ge = 15v -- 9 14 nc q ge gate-emitter charge -- 3 5 nc q gc gate-collector charge -- 1.5 3 nc l e internal emitter inductance measured 5mm from pkg -- 7.5 -- nh symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 2a t c = 25 c -- 1.4 1.7 v t c = 100 c -- 1.3 -- t rr diode reverse recovery time i f = 2a, di/dt = 200a/us t c = 25 c -- 45 80 ns t c = 100 c -- 75 -- i rr diode peak reverse recovery current t c = 25 c -- 1.5 3.0 a t c = 100 c -- 2.5 -- q rr diode reverse recovery charge t c = 25 c -- 60 135 nc t c = 100 c -- 120 --
sgu2n60ufd rev. a1 sgu2n60ufd ?2002 fairchild semiconductor corporation 048121620 0 4 8 12 16 20 common emitter t c = 125 2.4a 1.2a i c = 0.6a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 048121620 0 4 8 12 16 20 common emitter t c = 25 2.4a 1.2a i c = 0.6a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1 10 100 1000 duty cycle : 50% t c = 100 power dissipation = 4w v cc = 300v load current : peak of square wave frequency [khz] load current [a] 0306090120150 0 1 2 3 4 2.4a 1.2a i c = 0.6a common emitter v ge = 15v collector - emitter voltage, v ce [v] case temperature, t c [ ] 0.5 1 10 0 1 2 3 4 5 6 common emitter v ge = 15v t c = 25 t c = 125 collector current, i c [a] collector - emitter voltage, v ce [v] fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. saturation voltage vs. case temperature at variant current level fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 02468 0 2 4 6 8 10 12 20v 12v 15v v ge = 10v common emitter t c = 25 collector current, i c [a] collector - emitter voltage, v ce [v]
sgu2n60ufd rev. a1 sgu2n60ufd ?2002 fairchild semiconductor corporation 10 100 500 10 100 common emitter v cc = 300v, v ge = 15v i c = 1.2a t c = 25 t c = 125 ton tr switching time [ns] gate resistance, r g [ ? ] 10 100 500 5 10 100 eoff eon eoff common emitter v cc = 300v, v ge = 15v i c = 1.2a t c = 25 t c = 125 switching loss [uj] gate resistance, r g [ ? ] 10 100 500 50 100 600 toff tf toff tf common emitter v cc = 300v, v ge = 15v i c = 1.2a t c = 25 t c = 125 switching time [ns] gate resistance, r g [ ? ] 11030 0 40 80 120 160 cres coes cies common emitter v ge = 0v, f = 1mhz t c = 25 capacitance [pf] collector - emitter voltage, v ce [v] fig 7. capacitance characteristics fig 8. turn-on characteristics vs. gate resistance fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current 0.5 1.0 1.5 2.0 2.5 100 1000 tf toff toff tf common emitter v cc = 300v, v ge = 15v r g = 200 ? t c = 25 t c = 125 switching time [ns] collector current, i c [a] 0.5 1.0 1.5 2.0 2.5 10 100 ton tr common emitter v cc = 300v, v ge = 15v r g = 200 ? t c = 25 t c = 125 switching time [ns] collector current, i c [a]
sgu2n60ufd rev. a1 sgu2n60ufd ?2002 fairchild semiconductor corporation 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 10 0.5 0.2 0.1 0.05 0.02 0.01 single pulse thermal response, zthjc [ /w] rectangular pulse duration [sec] 1 10 100 1000 0.1 1 10 20 safe operating area v ge =20v, t c =100 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0246810 0 3 6 9 12 15 300 v 200 v v ce = 100 v common emitter r l = 250 ? tc = 25 gate - emitter voltage, v ge [ v ] gate charge, q g [ nc ] fig 14. gate charge characteristics fig 15. soa characteristics fig 16. turn-off soa characteristics fig 13. switching loss vs. collector current pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm zthjc + t c fig 17. transient thermal impedance of igbt 0.3 1 10 100 1000 0.01 0.1 1 10 30 single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature 50us 100us 1 ? dc operation i c max. (continuous) i c max. (pulsed) collector current, i c [a] collector-emitter voltage, v ce [v] 0.5 1.0 1.5 2.0 2.5 10 100 eoff eon eon eoff common emitter v cc = 300v, v ge = 15v r g = 200 ? t c = 25 t c = 125 switching loss [uj] collector current, i c [a]
sgu2n60ufd rev. a1 sgu2n60ufd ?2002 fairchild semiconductor corporation 100 500 0 20 40 60 80 100 v r = 200v i f = 2a t c = 25 t c = 100 reverce recovery time, t rr [ns] di/dt [a/us] 100 500 0 20 40 60 80 100 120 v r = 200v i f = 2a t c = 25 t c = 100 stored recovery charge, q rr [nc] di/dt [a/us] 100 500 1 10 v r = 200v i f = 2a t c = 25 t c = 100 reverse recovery current, i rr [a] di/dt [a/us] 0.1 1 10 30 0123 t c = 25 t c = 100 forward voltage drop, v fm [v] forward current, i f [a] fig 19. reverse recovery current fig 18. forward characteristics fig 20. stored charge fig 21. reverse recovery time
?2002 fairchild semiconductor corporation sgu2n60ufd rev. a1 sgu2n60ufd package dimension 6.60 0.20 0.76 0.10 max0.96 2.30typ [2.30 0.20] 2.30typ [2.30 0.20] 0.60 0.20 0.80 0.10 1.80 0.20 9.30 0.30 16.10 0.30 6.10 0.20 0.70 0.20 5.34 0.20 0.50 0.10 0.50 0.10 2.30 0.20 (0.50) (0.50) (4.34) i-pak dimensions in millimeters
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. h5 ?2002 fairchild semiconductor corporation star*power is used under license acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? i 2 c? isoplanar? littlefet? microfet? micropak? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? spm? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet ? vcx?
product folder - fairchild p/n sgu2n60ufd - discrete, high performance igbt with diode fairchild semiconductor space space space search | parametric | cross reference space product folders and datasheets application notes space space space find products home >> find products >> space space space space products groups space analog and mixed signal discrete interface logic microcontrollers non-volatile memory optoelectronics markets and applications new products product selection and parametric search cross-reference search technical information buy products technical support my fairchild company sgu2n60ufd discrete, high performance igbt with diode related links request samples dotted line how to order products dotted line product change notices (pcns) dotted line support dotted line distributor and field sales representatives dotted line quality and reliability dotted line design tools contents general description | features | applications | product status/pricing/packaging | models general description fairchild's ufd series of insulated gate bipolar transistors (igbts) provides low conduction and switching losses. the ufd series is designed for applications such as motor control and general inverters where high speed switching is a required feature. back to top features l high speed switching l low saturation voltage : v ce(sat) = 2.1 v @ i c = 1.2a l high input impedance l co-pak, igbt with frd : t rr = 45ns (typ.) back to top applications ac &dc motor controls, general purpose inverters, robotics, servo controls back to top space datasheet download this datasheet pdf e-mail this datasheet [e- mail] this page print version product status/pricing/packaging file:///c|/pdf/sgu2n60ufd.html (1 of 2) [27-jul-02 5:38:03 pm]
product folder - fairchild p/n sgu2n60ufd - discrete, high performance igbt with diode product product status pricing* package type leads packing method SGU2N60UFDTU full production $0.63 to-251(ipak) 3 rail * 1,000 piece budgetary pricing back to top models package & leads condition temperature range software version revision date pspice to-251(ipak)-3 electrical 25c 9.2 jun 28, 2002 back to top space space home | find products | technical information | buy products | support | company | contact us | site index | privacy policy ? copyright 2002 fairchild semiconductor space space file:///c|/pdf/sgu2n60ufd.html (2 of 2) [27-jul-02 5:38:03 pm]
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